The paper describes the evaluation of devices using "locked-down" VCSEL fabrication process, which includes a more optimal growth condition for the InGaAsN-based active region. From preliminary reliability studies, product requirements, and device performance, designed stress conditions for all the reliability endurance tests are described.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Reliability evaluation of 1.3 micron, oxide-apertured, InGaAsN VCSELs


    Contributors:


    Publication date :

    2004-01-01


    Size :

    134404 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Reliability Evaluation of 1.3 Micron, Oxide-Apertured, InGaAsN VCSELs

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004


    High-performance 1.3-micron InGaAsN VCSELs

    Klem, J.F. / Serkland, D.K. / Geib, K.M. | IEEE | 2001


    WY2 High-Performance 1.3-Micron InGaAsN VCSELs

    IEEE | British Library Conference Proceedings | 2001


    1.3 micron InGaAsN oxide-confined VCSELs grown by MOCVD

    Murray, C.S. / Newman, F.D. / Shangzhu Sun, et al. | IEEE | 2002


    Oxide-apertured VCSELs with use of Oxide GaAs Distributed Bragg Reflectors and Tunnel Injection

    Huffaker, D. L. / Oh, T.-H. / Deppe, D. G. et al. | British Library Conference Proceedings | 1997