The paper describes the evaluation of devices using "locked-down" VCSEL fabrication process, which includes a more optimal growth condition for the InGaAsN-based active region. From preliminary reliability studies, product requirements, and device performance, designed stress conditions for all the reliability endurance tests are described.
Reliability evaluation of 1.3 micron, oxide-apertured, InGaAsN VCSELs
2004-01-01
134404 byte
Conference paper
Electronic Resource
English
Reliability Evaluation of 1.3 Micron, Oxide-Apertured, InGaAsN VCSELs
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