The present disclosure presents a chemical vapor deposition reactor having improved chemical utilization and cost efficiency. The wafer susceptors of the present disclosure may be used in a stackable configuration for processing many wafers simultaneously. The reactors of the present disclosure may be reverse-flow depletion mode reactors, which tends to provide uniform film thickness and a high degree of chemical utilization.


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    Title :

    HIGH EFFICIENCY EPITAXIAL CHEMICAL VAPOR DEPOSITION (CVD) REACTOR


    Additional title:

    HOCHLEISTUNGSREAKTOR FÜR EPITAKTISCHE GASPHASENABSCHEIDUNG (CVD)
    RÉACTEUR DE DÉPÔT CHIMIQUE EN PHASE VAPEUR (CVD) ÉPITAXIAL À RENDEMENT ÉLEVÉ


    Contributors:

    Publication date :

    2016-03-30


    Type of media :

    Patent


    Type of material :

    Electronic Resource


    Language :

    English


    Classification :

    IPC:    B60R Fahrzeuge, Fahrzeugausstattung oder Fahrzeugteile, soweit nicht anderweitig vorgesehen , VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR / C23C Beschichten metallischer Werkstoffe , COATING METALLIC MATERIAL / C30B SINGLE-CRYSTAL GROWTH , Züchten von Einkristallen



    Chemical-vapor-deposition reactor

    Chern, S. | NTRS | 1979




    Numerical modeling of chemical vapor deposition (CVD) in a horizontal reactor

    SHEIKHOLESLAMI, M. / JASINSKI, T. / FRETZ, K. | AIAA | 1988


    Growth of ZnO epitaxial films by metal organic chemical vapor deposition at various temperatures

    Zhang, B. P. / Wakatsuki, K. / Binh, N. T. et al. | British Library Conference Proceedings | 2003