The present disclosure presents a chemical vapor deposition reactor having improved chemical utilization and cost efficiency. The wafer susceptors of the present disclosure may be used in a stackable configuration for processing many wafers simultaneously. The reactors of the present disclosure may be reverse-flow depletion mode reactors, which tends to provide uniform film thickness and a high degree of chemical utilization.
HIGH EFFICIENCY EPITAXIAL CHEMICAL VAPOR DEPOSITION (CVD) REACTOR
HOCHLEISTUNGSREAKTOR FÜR EPITAKTISCHE GASPHASENABSCHEIDUNG (CVD)
RÉACTEUR DE DÉPÔT CHIMIQUE EN PHASE VAPEUR (CVD) ÉPITAXIAL À RENDEMENT ÉLEVÉ
2016-03-30
Patent
Electronic Resource
English
Chemical-vapor-deposition reactor
NTRS | 1979
|Growth of ZnO epitaxial films by metal organic chemical vapor deposition at various temperatures
British Library Conference Proceedings | 2003
|