A study of neutron‐induced displacement damage effects as a function of temperature is reported for n‐channel, 2‐μm channel length, depletion mode junction‐field‐effect‐transistor (JFETs) fabricated on 6H‐silicon carbide (SiC). Very little effect on the electrical characteristics of the devices was observed for neutron fluences less than 1015 n/cm2 and the effect for fluences greater than 1015 n/cm2 became less significant with increasing temperature. The results offer promise for SiC devices to be used in applications which combine high‐temperature and radiation environments, where Si and GaAs technologies are limited.


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    Title :

    Displacement damage effects in SiC JFETs as a function of temperture



    Conference:

    10th SymposiumùSpace Nuclear Power and Propulsion ; 1993 ; Albuquerque, NM, USA


    Published in:

    AIP Conference Proceedings ; 271 , 2 ; 609-615


    Publication date :

    1993-01-15


    Size :

    7 pages





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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