A study of neutron‐induced displacement damage effects as a function of temperature is reported for n‐channel, 2‐μm channel length, depletion mode junction‐field‐effect‐transistor (JFETs) fabricated on 6H‐silicon carbide (SiC). Very little effect on the electrical characteristics of the devices was observed for neutron fluences less than 1015 n/cm2 and the effect for fluences greater than 1015 n/cm2 became less significant with increasing temperature. The results offer promise for SiC devices to be used in applications which combine high‐temperature and radiation environments, where Si and GaAs technologies are limited.


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    Titel :

    Displacement damage effects in SiC JFETs as a function of temperture


    Beteiligte:
    McGarrity, James M. (Autor:in) / Oakley, Robert E. (Autor:in) / DeLancey, W. Merle (Autor:in) / McLean, F. Barry (Autor:in) / El-Genk, Mohamed S. (Herausgeber:in) / Hoover, Mark D. (Herausgeber:in)

    Kongress:

    10th SymposiumùSpace Nuclear Power and Propulsion ; 1993 ; Albuquerque, NM, USA


    Erschienen in:

    AIP Conference Proceedings ; 271 , 2 ; 609-615


    Erscheinungsdatum :

    15.01.1993


    Format / Umfang :

    7 pages





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




    Displacement Damage Effects in SiC JFETs as a Function of Temperature

    McGarrity, J. M. / Delancey, W. M. / McLean, F. B. et al. | British Library Conference Proceedings | 1993


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