Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Study on impact ionization in charge layer of InP/InGaAs SAGCM avalanche photodiodes


    Contributors:
    Zhang, S. (author) / Zhao, Y. (author)

    Published in:

    Publication date :

    2015-01-01


    Size :

    8 pages



    Type of media :

    Article (Journal)


    Type of material :

    Print


    Language :

    English


    Classification :

    DDC:    537.5



    Numerical Simulation of Avalanche Breakdown within InP-InGaAs SAGCM Standoff Avalanche Photodiodes

    Haralson, J. N. / Parks, J. W. / Brennan, K. F. et al. | British Library Online Contents | 1997


    Resonant-Cavity InGaAs/InAlAs Separate Absorption, Charge and Multiplication Avalanche Photodiodes

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998




    Optimization of double diffused floating guarding ring InGaAs/InP avalanche photodiodes

    Jian Wei, / Dries, J.C. / Hongsheng Wang, et al. | IEEE | 2001