Tensile-strained 1.3 μm InGaAs/InGaAlAs quantum well structure of high temperature characteristics
OPTICAL AND QUANTUM ELECTRONICS ; 40 , 10 ; 749-756
2008-01-01
8 pages
Article (Journal)
English
DDC: | 537.5 |
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Normal Incidence P-Type InGaAs/InGaAlAs Strained Quantum Well Infrared Photodetector
British Library Conference Proceedings | 1995
|High temperature InGaAs strained quantum well lasers
Tema Archive | 1992
|British Library Online Contents | 2003
|