Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    The Study of Femto-Second Laser Induced Damage Threshold on Semi-Insulating GaAs Wafer


    Contributors:

    Conference:

    SYMPOSIUM D, Semiconductor photonics: nano-structured materials and devices ; 2007 ; Singapore



    Publication date :

    2008-01-01


    Size :

    3 pages


    Remarks:

    Includes bibliographical references and index; Held as part of the International conference on materials for advanced technologies (ICMAT) 2007




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English





    GaAs Semi-Insulating Layer for a GaAs Device

    Sherrill, G. / Mattauch, R. J. | NTRS | 1986


    Sub-femto-watt/femto-second Ac Balanced Homodyne Detection For Observation Of Rabi-oscillation

    Shudong Jiang, / Machida, S. / Takiguchi, Y. et al. | IEEE | 1997


    GaAs/AlGaAs buried-heterostructure laser diodes with semi-insulating GaInP:Fe regrowth

    Angulo Barrios, C. / Lourdudoss, S. / Messmer, L.R. et al. | IEEE | 2001


    GaAs/AlGaAs Buried -Heterostructure Laser Diodes with Semi-Insulating GaInP:Fe Regrowth

    Barrios, C. A. / Lourdudoss, S. / Messmer, E. R. et al. | British Library Conference Proceedings | 2001