Light-Emitting Devices Fabricated with CdSe Nano-Crystals Coated on an InGaN/GaN Quantum-Well Structure for Polychromatic Generation
18th:; ANNUAL MEETING, Lasers and Electro-Optics Society; IEEE LEOS ; 2005 ; Sydney, Australia
2005-01-01
2 pages
IEEE cat no: 05CH37693
Conference paper
English
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400nm InGaN/GaN and InGaN/AlGaN Multiquantum Well Light-emitting Diodes
British Library Conference Proceedings | 2003
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