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    Title :

    A Deep Level Transient Spectroscopy Study of Vacancy-Related Defect Profiles in Channelled Ion Implanted Silicon



    Conference:

    Conference, Optoelectronic and microelectronic materials and devices; COMMAD 2002 ; 2002 ; Sydney, Australia



    Publication date :

    2002-01-01


    Size :

    4 pages


    Remarks:

    IEEE cat no 02EX601




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English





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