The effect of implantation angle on the profile of vacancy-related defects, represented by the divacancy and vacancy-phosphorus centres, in n-type <100> Cz-Si implanted with 450 keV P or 600 keV Si ions to a dose of 2 /spl times/ 10/sup -9/ ions/spl middot/cm/sup -2/ , has been examined using deep level transient spectroscopy depth profiling. Implants were performed with samples aligned with 10/spl deg/ twists from the [110] planar direction and various tilts from the <100> axis. The peak depth of the VP/V/sub 2/ profile exhibits a systematic variation with the implantation angle: shifting towards the surface, narrowing and increasing in peak concentration as the implantation angle is progressively varied from the aligned direction. For well-channeled 450 keV P ions, the peak in the defect profile is approximately 0.9 microns deeper than the peak in the vacancy profile predicted using the binary collision codes MARLOWE and Crystal-TCAS. The effect of the surface proximity on defect concentrations has been considered by comparing those profiles obtained for 450 keV P implanted samples with those of 600 keV Si implanted samples.


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    Title :

    A deep level transient spectroscopy study of vacancy-related defect profiles in channeled ion implanted silicon


    Contributors:


    Publication date :

    2002-01-01


    Size :

    218855 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    A Deep Level Transient Spectroscopy Study of Vacancy-Related Defect Profiles in Channelled Ion Implanted Silicon

    Lay, M. D. H. / McCallum, J. C. / de MAzevedo, G. et al. | British Library Conference Proceedings | 2002


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