Minority Carrier Behaviour in Abrupt MBE Grown HgCdTe Heterostructures
Conference, Optoelectronic and microelectronic materials and devices; COMMAD 2002 ; 2002 ; Sydney, Australia
2002-01-01
4 pages
IEEE cat no 02EX601
Conference paper
English
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Minority carrier lifetime in abrupt MBE-grown HgCdTe heterostructures [4795-37]
British Library Conference Proceedings | 2002
|MBE growth of HgCdTe HOT detector heterostructures [4795-16]
British Library Conference Proceedings | 2002
|Improving MOS minority-carrier lifetime
NTRS | 1981
|Hybrid 256x256 LWIR FPA using MBE-grown HgCdTe on GaAs [2552-41]
British Library Conference Proceedings | 1995
|