Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Epitaxial layer CdHgTe stress influence on diffusion impurities during creation of photodetectors [3890-08]



    Conference:

    International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev



    Publication date :

    1999-01-01


    Size :

    3 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Nr. 3890

    DataCite | 1920


    Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence [3890-36]

    Berchenko, N. N. / Yakovyna, V. S. / Nikiforov, A. Y. et al. | British Library Conference Proceedings | 1999


    Epitaxial lead-chalcogenide on silicon layers for thermal imaging applications [3890-03]

    Zogg, H. / National Academy of Sciences of Ukraine; Institute of Semiconductor Physics | British Library Conference Proceedings | 1999


    Dielectric function of nonlinear metal composite with double-layer ellipsoidal inclusions [3890-62]

    Grechko, L. G. / Davydova, O. A. / Malnev, V. N. et al. | British Library Conference Proceedings | 1999


    Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence [3890-70]

    Berchenko, N. N. / Yakovyna, V. S. / Nikiforov, A. Y. et al. | British Library Conference Proceedings | 1999