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    Title :

    Epitaxial lead-chalcogenide on silicon layers for thermal imaging applications [3890-03]



    Conference:

    International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev



    Publication date :

    1999-01-01


    Size :

    5 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    High-quality lead telluride films grown on silicon with buffer porous silicon layers [3890-79]

    Zimin, S. P. / Preobrazhensky, M. N. / Zimin, D. S. et al. | British Library Conference Proceedings | 1999


    Nr. 3890

    DataCite | 1920


    Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence [3890-36]

    Berchenko, N. N. / Yakovyna, V. S. / Nikiforov, A. Y. et al. | British Library Conference Proceedings | 1999


    Photoelectric properties of polycrystalline layers based on halogen-doped PbTe [3890-39]

    Bondokov, R. T. / Dimitrov, D. T. / Moshnikov, V. A. et al. | British Library Conference Proceedings | 1999


    Epitaxial layer CdHgTe stress influence on diffusion impurities during creation of photodetectors [3890-08]

    Monastyrskii, L. S. / National Academy of Sciences of Ukraine; Institute of Semiconductor Physics | British Library Conference Proceedings | 1999