High-quality lead telluride films grown on silicon with buffer porous silicon layers [3890-79]
International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev
1999-01-01
5 pages
Conference paper
English
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Epitaxial lead-chalcogenide on silicon layers for thermal imaging applications [3890-03]
British Library Conference Proceedings | 1999
|DataCite | 1920
New optical materials for an infrared technique based on cadmium telluride [3890-67]
British Library Conference Proceedings | 1999
|Silicon p-i-n photodiode with low values of dark current [3890-19]
British Library Conference Proceedings | 1999
|Optical properties of semiconducting iron disilicide thin films [3890-29]
British Library Conference Proceedings | 1999
|