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    Titel :

    Epitaxial layer CdHgTe stress influence on diffusion impurities during creation of photodetectors [3890-08]



    Kongress:

    International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev



    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    3 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Nr. 3890

    DataCite | 1920


    Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence [3890-36]

    Berchenko, N. N. / Yakovyna, V. S. / Nikiforov, A. Y. et al. | British Library Conference Proceedings | 1999


    Epitaxial lead-chalcogenide on silicon layers for thermal imaging applications [3890-03]

    Zogg, H. / National Academy of Sciences of Ukraine; Institute of Semiconductor Physics | British Library Conference Proceedings | 1999


    Dielectric function of nonlinear metal composite with double-layer ellipsoidal inclusions [3890-62]

    Grechko, L. G. / Davydova, O. A. / Malnev, V. N. et al. | British Library Conference Proceedings | 1999


    Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence [3890-70]

    Berchenko, N. N. / Yakovyna, V. S. / Nikiforov, A. Y. et al. | British Library Conference Proceedings | 1999