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    Titel :

    Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence [3890-70]



    Kongress:

    International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev



    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    4 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence [3890-36]

    Berchenko, N. N. / Yakovyna, V. S. / Nikiforov, A. Y. et al. | British Library Conference Proceedings | 1999


    Galvanomagnetic and optical properties of CdTe wafers for substrates [3890-37]

    Bogoboyashchiy, V. V. / National Academy of Sciences of Ukraine; Institute of Semiconductor Physics | British Library Conference Proceedings | 1999


    Nr. 3890

    DataCite | 1920


    Doping effect on concentration dependence of the diffusion coefficient in semiconductors [3890-48]

    Monastyrskii, L. S. / Sokolovsky, B. S. / National Academy of Sciences of Ukraine; Institute of Semiconductor Physics | British Library Conference Proceedings | 1999


    Epitaxial lead-chalcogenide on silicon layers for thermal imaging applications [3890-03]

    Zogg, H. / National Academy of Sciences of Ukraine; Institute of Semiconductor Physics | British Library Conference Proceedings | 1999