Access

    Access via TIB

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Characteristics of InGaAs/GaAs/GaInP Quantum Well Lasers Grown by Gas-Source Molecular-Beam Epitaxy


    Contributors:
    Zhang, G. (author) / Ovtchinnikov, A. (author) / Naeppi, J. (author) / Asonen, H. (author) / IEEE

    Conference:

    13th, International semiconductor laser conference ; 1992 ; Takamatsu; Japan



    Publication date :

    1992-01-01


    Size :

    2 pages


    Remarks:

    Described as the conference digest



    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English