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    Title :

    MBE growth of low-threshold-current InGaAs VCSEL structure [2886-542]



    Conference:

    Conference, Semiconductor lasers II ; 1996 ; Beijing



    Publication date :

    1996-01-01


    Size :

    4 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    Low-threshold-current InGaAs vertical cavity surface emitting laser with reverse mesa structure [2886-537]

    Pan, Z. / Huang, Y. / Wu, R. et al. | British Library Conference Proceedings | 1996


    VCSEL array fabricated by selective etching and selective oxidation [2886-529]

    Lin, S. / Kang, X. / Wang, Q. et al. | British Library Conference Proceedings | 1996


    Nr. 2886

    DataCite | 1900


    Strained InGaAs ridge quantum wires structure grown by molecular beam epitaxy on nonplanar substrate [2886-541]

    Niu, Z. / Zhou, Z. / Lin, Y. et al. | British Library Conference Proceedings | 1996


    Interdiffusion effect on the gain of InGaAs/InP quantum well laser [2886-509]

    Chan, M. C. Y. / Chan, K. S. / Li, E. H. et al. | British Library Conference Proceedings | 1996