MBE growth of low-threshold-current InGaAs VCSEL structure [2886-542]
Conference, Semiconductor lasers II ; 1996 ; Beijing
1996-01-01
4 pages
Aufsatz (Konferenz)
Englisch
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British Library Conference Proceedings | 1996
|DataCite | 1900
VCSEL array fabricated by selective etching and selective oxidation [2886-529]
British Library Conference Proceedings | 1996
|British Library Conference Proceedings | 1996
|High-power GRIN-SCH lasers with low-threshold-current density and high efficiency [2886-533]
British Library Conference Proceedings | 1996
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