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    Titel :

    MBE growth of low-threshold-current InGaAs VCSEL structure [2886-542]



    Kongress:

    Conference, Semiconductor lasers II ; 1996 ; Beijing



    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    4 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Low-threshold-current InGaAs vertical cavity surface emitting laser with reverse mesa structure [2886-537]

    Pan, Z. / Huang, Y. / Wu, R. et al. | British Library Conference Proceedings | 1996


    Nr. 2886

    DataCite | 1900


    VCSEL array fabricated by selective etching and selective oxidation [2886-529]

    Lin, S. / Kang, X. / Wang, Q. et al. | British Library Conference Proceedings | 1996


    Strained InGaAs ridge quantum wires structure grown by molecular beam epitaxy on nonplanar substrate [2886-541]

    Niu, Z. / Zhou, Z. / Lin, Y. et al. | British Library Conference Proceedings | 1996


    High-power GRIN-SCH lasers with low-threshold-current density and high efficiency [2886-533]

    Zhu, D. / Wang, Z. / Liang, J. et al. | British Library Conference Proceedings | 1996