Low-threshold-current InGaAs vertical cavity surface emitting laser with reverse mesa structure [2886-537]
Conference, Semiconductor lasers II ; 1996 ; Beijing
1996-01-01
5 pages
Aufsatz (Konferenz)
Englisch
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MBE growth of low-threshold-current InGaAs VCSEL structure [2886-542]
British Library Conference Proceedings | 1996
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Interdiffusion effect on the gain of InGaAs/InP quantum well laser [2886-509]
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