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    Title :

    Interdiffusion effect on the gain of InGaAs/InP quantum well laser [2886-509]



    Conference:

    Conference, Semiconductor lasers II ; 1996 ; Beijing



    Publication date :

    1996-01-01


    Size :

    11 pages




    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English




    High-power 980-nm strained InGaAs/AlGaAs/GaAs quantum well laser [2886-570]

    Hua, J. / Guan, X. / SPIE-The International Society for Optical Engineering | British Library Conference Proceedings | 1996


    1.48-m InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers [2886-559]

    An, H. / Yang, S. / Sun, H. et al. | British Library Conference Proceedings | 1996


    Nr. 2886

    DataCite | 1900


    Design and fabrication of 980-nm InGaAs/A1GaAs quantum well lasers with low beam divergence [2886-535]

    Yang, G. / Xu, J. / Xu, Z. et al. | British Library Conference Proceedings | 1996


    MBE growth of low-threshold-current InGaAs VCSEL structure [2886-542]

    Lin, Y. / Zhou, Z. / Pan, Z. et al. | British Library Conference Proceedings | 1996