High-electron-mobility sensor films deposited on superlattice buffer (strain) layers. Improved Hall-effect sensors offer combination of adequate response and high speed needed for use in micromagnet/Hall-effect random-access memories. Hall-effect material chosen for use in sensors is InAs.
Improved Hall-Effect Sensors For Magnetic Memories
NASA Tech Briefs ; 17 , 9
1993-09-01
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Englisch
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