Two improved readout circuits for micromagnet/Hall-effect random-access memories designed to eliminate current shunts introducing errors into outputs of older readout circuits. Incorporate additional switching transistors to isolate Hall sensors as needed.


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    Titel :

    Improved Readout For Micromagnet/Hall-Effect Memories


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1993-09-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch





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