Ferroelectric memories with enhanced photoresponse leading to improved nondestructive optoelectronic readout and lower power demand proposed. Memories improved versions of devices described in "Rapid, Nondestructive Readout From Ferroelectric Memory" (NPO-18551). In proposed application, array of nonvolatile ferroelectric memory cells fabricated by standard very-large-scale integrated-circuit techniques and flip-bonded onto similarly fabricated array of semiconductor lasers, {see "Optically Addressable, Ferroelectric Memory With NDRO" (NPO-18573)}.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    Improved Ferroelectric Memories With Nondestructive Readout


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1994-11-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch





    Improved Readout For Micromagnet/Hall-Effect Memories

    Wu, Jiin-Chuan / Stadler, Henry L. / Katti, Romney R. | NTRS | 1993



    Ultra-High-Density Ferroelectric Memories

    Thakoor, Sarita | NTRS | 1995


    Multidimensional partial response for parallel readout optical memories [2297-39]

    Olson, B. H. / Esener, S. C. / SPIE | British Library Conference Proceedings | 1994