High-electron-mobility sensor films deposited on superlattice buffer (strain) layers. Improved Hall-effect sensors offer combination of adequate response and high speed needed for use in micromagnet/Hall-effect random-access memories. Hall-effect material chosen for use in sensors is InAs.


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    Title :

    Improved Hall-Effect Sensors For Magnetic Memories


    Contributors:

    Published in:

    Publication date :

    1993-09-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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