Proposed integrated, solid-state, analog random-access memory base on principle of magnetic writing and magnetoresistive reading. Current in writing conductor magnetizes storage layer. Remanent magnetization in storage layer penetrates readout layer and detected by magnetoresistive effect or Hall effect. Memory cells are part of integrated circuit including associated reading and writing transistors. Intended to provide high storage density and rapid access, nonvolatile, consumes little power, and relatively invulnerable to ionizing radiation.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    Magnetic Analog Random-Access Memory


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    1991-11-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




    Holographic random access memory

    Wenhai Liu, / Psaltis, D. | IEEE | 2000


    Holographic Random Access Memory

    Liu, W. / Psaltis, D. / Institute of Electrical and Electronics Engineers | British Library Conference Proceedings | 2000


    Garnet Random-Access Memory

    Katti, Romney R. | NTRS | 1995


    Garnet Random-Access Memory

    Online Contents | 1995