Random-access memory (RAM) devices of proposed type exploit magneto-optical properties of magnetic garnets exhibiting perpendicular anisotropy. Magnetic writing and optical readout used. Provides nonvolatile storage and resists damage by ionizing radiation. Because of basic architecture and pinout requirements, most likely useful as small-capacity memory devices.
Garnet Random-Access Memory
NASA Tech Briefs ; 19 , 11
1995-11-01
Sonstige
Keine Angabe
Englisch
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