Proposed random-access integrated-circuit electronic memory offers nonvolatile magnetic storage. Bits stored magnetically and read out with Hall-effect sensors. Advantages include short reading and writing times and high degree of immunity to both single-event upsets and permanent damage by ionizing radiation. Use of same basic material for both transistors and sensors simplifies fabrication process, with consequent benefits in increased yield and reduced cost.


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    Titel :

    Nonvolatile GaAs Random-Access Memory


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.03.1994



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch





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