Proposed integrated, solid-state, analog random-access memory base on principle of magnetic writing and magnetoresistive reading. Current in writing conductor magnetizes storage layer. Remanent magnetization in storage layer penetrates readout layer and detected by magnetoresistive effect or Hall effect. Memory cells are part of integrated circuit including associated reading and writing transistors. Intended to provide high storage density and rapid access, nonvolatile, consumes little power, and relatively invulnerable to ionizing radiation.


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    Title :

    Magnetic Analog Random-Access Memory


    Contributors:

    Published in:

    Publication date :

    1991-11-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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