Subsurface inspection of a Si integrated circuit (IC) by a Numerical Aperture Increasing Lens (NAIL) microscope has yielded a lateral spatial resolution of better than 0.23 /spl mu/m. We compare NAIL microscopy to standard subsurface microscopy using the Hamamatsu /spl mu/AMOS-200, IC Failure Analysis System. The NAIL improves the microscope's lateral spatial resolution from /spl sim/1.7 /spl mu/m to /spl sim/0.3 /spl mu/m. It is difficult to obtain the longitudinal spatial resolution because the sample has multiple longitudinal dielectric interfaces.


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    Titel :

    Comparison of numerical aperture increasing lens and standard subsurface microscopy


    Beteiligte:
    Ippolito, S.B. (Autor:in) / Goldberg, B.B. (Autor:in) / Unlu, M.S. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    387221 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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