We report continuous wave (CW) operation for InGaAsN lasers up to 1.32 /spl mu/m. Also record low threshold current density J/sub TH/=2.7 kA/cm/sup 2/ (CW) at /spl lambda/=1.3 /spl mu/m, and record high output powers of 300 mW are demonstrated for nitrogen-based narrow ridge lasers.


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    Titel :

    Low threshold current, high efficiency 1.3 /spl mu/m wavelength InGaAsN-GaAs based quantum well lasers


    Beteiligte:
    Gokhale, M.R. (Autor:in) / Jian Wei (Autor:in) / Studenkov, P. (Autor:in) / Forrest, S.R. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    165785 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch





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