This study identifies the gain and dominant loss mechanisms in GaSb-based quantum-well diode lasers. Experimental results are presented and analyzed for a series of GaSb-based diode lasers all emitting at 2.0 /spl mu/m at 300 K.
Gain and internal losses in GaSb-based 2 /spl mu/m quantum-well diode-lasers
2003-01-01
126059 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Gain and Internal Losses in GaSb-based 2 mum Quantum-Well Diode-Lasers
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