This paper presents the design and performance of antimonide-based, type-I, quantum-well diode lasers. Using 1.5-% compressively strained InGaAsSb quantum wells, the quaternary's miscibility gap was avoided to produce room-temperature devices emitting at 2.5 and 2.8 /spl mu/m. The 2.5-/spl mu/m devices output 1 W continuous wave and nearly 5 W in pulsed operation. Modal gain measurements show internal losses less than 4 cm/sup -1/. This design should produce room-temperature diode lasers with wavelengths greater than 3 /spl mu/m.


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    Titel :

    Design and performance of AlGaAsSb/InGaAsSb/GaSb type-I quantum well diode lasers


    Beteiligte:
    Martinelli, R.U. (Autor:in) / Kim, J.G. (Autor:in) / Belenky, G.L. (Autor:in) / Shterengas, L. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    161636 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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