Summary form only given. One of the most important physical parameters determining the basic laser output characteristics such as threshold current is the optical gain. In present work for the first time we measured the current and temperature dependencies of the modal gain in 2.3 /spl mu/m InGaAsSb/AlGaAsSb wide aperture lasers. The heterostructures were grown by molecular beam epitaxy on GaSb substrates.


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    Titel :

    Current and temperature dependencies of the modal gain in wide aperture 2.3 /spl mu/m InGaAsSb/AlGaAsSb QW lasers


    Beteiligte:
    Donetsky, D.V. (Autor:in) / Belenky, G.L. (Autor:in) / Luryi, S. (Autor:in) / Garbuzov, D.Z. (Autor:in) / Lee, H. (Autor:in) / Martinelli, R.U. (Autor:in) / Connolly, J.C. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    277539 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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