This study identifies the gain and dominant loss mechanisms in GaSb-based quantum-well diode lasers. Experimental results are presented and analyzed for a series of GaSb-based diode lasers all emitting at 2.0 /spl mu/m at 300 K.


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    Title :

    Gain and internal losses in GaSb-based 2 /spl mu/m quantum-well diode-lasers


    Contributors:
    Rattunde, M. (author) / Schmitz, J. (author) / Kiefer, R. (author) / Wagner, J. (author)


    Publication date :

    2003-01-01


    Size :

    126059 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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