A new design for the vertical waveguide structure of (AIGaIn)(AsSb)-based diode lasers is presented. The active layers of all investigated samples consist of compressively strained 10 nm wide Ga/sub 0.64/In/sub 0.36/As/sub 0.10/Sb/sub 0.90/-QWs, separated by 20 nm wide lattice matched Al/sub 0.29/Ga/sub 0.71/As/sub 0.02/Sb/sub 0.98/ barriers. The emission wavelength is 2.3 /spl mu/m at room temperature. This new quantum-well diode laser design exhibits reduced beam divergence in the fast axis, while the laser performance is maintained compared to a standard large divergence waveguide design. This strong decrease in the fast axis divergence drastically increases the fiber coupling efficiency of GaSb-based diode lasers.


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    Titel :

    GaSb-based 2.3 /spl mu/m quantum-well diode-lasers with low beam divergence


    Beteiligte:
    Rattunde, M. (Autor:in) / Schmitz, J. (Autor:in) / Kaufel, G. (Autor:in) / Wagner, J. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    115898 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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