A new GaAs laser diode employing InGaAIP for the cadding layer has been successfully fabricated. A large bandgap difference between the GaAs active and the InGaAIP cladding layer reduced the electron overflow, which drasticaly improved the temperature characteristics.
Remarkable improvement in the temperature characteristics of GaAs Lasers Using an InGaAlP Cladding Layer
1992-01-01
117453 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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