A new GaAs laser diode employing InGaAIP for the cadding layer has been successfully fabricated. A large bandgap difference between the GaAs active and the InGaAIP cladding layer reduced the electron overflow, which drasticaly improved the temperature characteristics.


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    Titel :

    Remarkable improvement in the temperature characteristics of GaAs Lasers Using an InGaAlP Cladding Layer


    Beteiligte:
    Itaya, K. (Autor:in) / Hatakoshi, G. (Autor:in) / Nishikawa, Y. (Autor:in) / Okajima, M. (Autor:in)


    Erscheinungsdatum :

    1992-01-01


    Format / Umfang :

    117453 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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