Summary form only given. High-brightness visible light-emitting diodes (LEDs) are becoming increasingly important and have numerous potential applications, such as in the field of optical display systems. The quaternary In/sub 0.5/(Ga/sub 1-x/Al/sub x/)/sub 0.5/P alloys, which are lattice matched to GaAs, have a direct band-gap that ranges from 1.88 to 2.3 eV. InGaAlP is expected to be a promising candidate in high brightness visible LEDs. One of the problems in the InGaAlP LEDs grown on GaAs substrates was a restriction of light extraction efficiency caused by light absorption in the GaAs substrate. The effect of an absorbing layer or substrate can be minimized by two methods: one is growing a Bragg reflector between the standard LED epitaxial layers and the absorbing GaAs substrate, and the other is wafer bonding technology.


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    Titel :

    Wafer-bonded InGaAlP/AuBe/glass light-emitting diodes


    Beteiligte:
    Horng, R.H. (Autor:in) / Wuu, D.S. (Autor:in) / Tseng, H.W. (Autor:in) / Wei, S.C. (Autor:in) / Huang, H.F. (Autor:in) / Chang, K.H. (Autor:in) / Liu, P.H. (Autor:in) / Lin, K.C. (Autor:in)


    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    294468 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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