A new GaAs laser diode employing InGaAIP for the cadding layer has been successfully fabricated. A large bandgap difference between the GaAs active and the InGaAIP cladding layer reduced the electron overflow, which drasticaly improved the temperature characteristics.


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    Title :

    Remarkable improvement in the temperature characteristics of GaAs Lasers Using an InGaAlP Cladding Layer


    Contributors:
    Itaya, K. (author) / Hatakoshi, G. (author) / Nishikawa, Y. (author) / Okajima, M. (author)


    Publication date :

    1992-01-01


    Size :

    117453 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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