We demonstrate continuous wave operation of MOCVD-grown 1.55 /spl mu/m buried tunnel junction VCSELs at room temperature. This buried tunnel junction VCSEL structure is prepared by MOCVD twofold epitaxial growth. The threshold current and emission wavelength for a 10 /spl mu/m-diameter device are 3.5 mA and 1552 nm, respectively.
Continuous wave operation of MOCVD grown 1.55 /spl mu/m buried tunnel junction VCSELs
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; 2 ; 693-694 vol.2
2002-01-01
111673 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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