We demonstrate continuous wave operation of MOCVD-grown 1.55 /spl mu/m buried tunnel junction VCSELs at room temperature. This buried tunnel junction VCSEL structure is prepared by MOCVD twofold epitaxial growth. The threshold current and emission wavelength for a 10 /spl mu/m-diameter device are 3.5 mA and 1552 nm, respectively.


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    Title :

    Continuous wave operation of MOCVD grown 1.55 /spl mu/m buried tunnel junction VCSELs


    Contributors:
    Song, H.-W. (author) / Kwon, O.-K. (author) / Han, W.-S. (author) / Ju, Y.-G. (author) / Kim, J.-H. (author) / Shin, J.-H. (author) / Yoo, B.-S. (author)


    Publication date :

    2002-01-01


    Size :

    111673 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English







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