In this talk, we present the fabrication process and laser results for narrow stripe, index-guided strained layer lasers with low threshold currents and good spectral characteristics. Threshold currents as low as 11 mA for uncoated devices and single longitudinal mode operation are obtained for the three step growth buried heterostructure laser, indicating high quality device performance for devices fabricated with an AlGaAs regrowth step.<>
Strained-layer InGaAs-GaAs-AlGaAs buried heterostructure lasers by three-step selective-area metalorganic chemical vapor deposition
Proceedings of LEOS '93 ; 16-17
01.01.1993
223257 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 1993
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British Library Conference Proceedings | 1993
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