In this talk, we present the fabrication process and laser results for narrow stripe, index-guided strained layer lasers with low threshold currents and good spectral characteristics. Threshold currents as low as 11 mA for uncoated devices and single longitudinal mode operation are obtained for the three step growth buried heterostructure laser, indicating high quality device performance for devices fabricated with an AlGaAs regrowth step.<>


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    Title :

    Strained-layer InGaAs-GaAs-AlGaAs buried heterostructure lasers by three-step selective-area metalorganic chemical vapor deposition


    Contributors:

    Published in:

    Publication date :

    1993-01-01


    Size :

    223257 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English






    Low Threshold InGaAs-AlGaAs-GaAs Strained-Layer Quantum Well Heterostructure Square Ring Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993