Light emitting diodes (LEDs) and superluminescent diodes (SLDs) with broad spectral widths have been fabricated by a variety of techniques. Recently, a selective area growth technique has been reported that utilizes growth inhibition from a silicon dioxide mask to control the quantum well (QW) thickness and thus the emission wavelength. In this talk, we report the fabrication of a broad spectrum strained layer InGaAs-GaAs-AlGaAs single quantum well edge emitting LED grown by conventional atmospheric pressure metalorganic chemical vapor deposition (MOCVD) using selective-area growth and regrowth. In the selective-area epitaxy process, a patterned silicon dioxide mask is used to enhance the growth rate in unmasked areas of a substrate. The extent of growth rate enhancement is dependent on the relative area of masked and unmasked regions. With this in mind, we fabricated a dual stripe tapered oxide width mask pattern for the active region regrowth, in order to produce a device with a continuous variation in QW thickness along its length.


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    Titel :

    A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition


    Beteiligte:
    Osowski, M.L. (Autor:in) / Cockerill, T.M. (Autor:in) / Lammert, R.M. (Autor:in) / Forbes, D.V. (Autor:in) / Ackley, D.E. (Autor:in) / Coleman, J.J. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 1 ; 119-120 vol.1


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    168008 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch