In this talk, we present the design and device results of strained-layer InGaAs-GaAs-InGaP separate confinement heterostructure lasers emitting at 1.14 /spl mu/m fabricated on a ternary In/sub 0.03/Ga/sub 0.97/As substrate. The InGaAs substrate used for the devices in this talk was measured by FTIR spectroscopy to have an indium molar percent of 3.03%.
1.14 /spl mu/m strained-layer InGaAs-GaAs-InGaP SQW lasers on ternary In/sub 0.03/Ga/sub 0.97/As substrates by metalorganic chemical vapor deposition
1996-01-01
172376 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Conference Proceedings | 1996
|British Library Conference Proceedings | 1993
|British Library Conference Proceedings | 1994
|InGaAs/GaAs strained quantum-well lasers
SPIE | 1993
|