Channel guide lasers are, for the first time, demonstrated with ln/sub 0.18/Ga/sub 0.82/As-GaAs-In/sub 0.49/Ga/sub 0.51/P strained quantum well heterostructure on p-type GaAs substrate (/spl lambda/L= 980nm). The uncoated lasers show CW laser thresholds of 12mA at RT and high output powers of 125mW.


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    Titel :

    Channel guide InGaAs-GaAs-InGaP strained quantum well lasers on P-type GaAs substrate for high power operation


    Beteiligte:
    Sin, Y.K. (Autor:in) / Horikawa, H. (Autor:in) / Kamijoh, T. (Autor:in)


    Erscheinungsdatum :

    01.01.1992


    Format / Umfang :

    269086 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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