Channel guide lasers are, for the first time, demonstrated with ln/sub 0.18/Ga/sub 0.82/As-GaAs-In/sub 0.49/Ga/sub 0.51/P strained quantum well heterostructure on p-type GaAs substrate (/spl lambda/L= 980nm). The uncoated lasers show CW laser thresholds of 12mA at RT and high output powers of 125mW.


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    Title :

    Channel guide InGaAs-GaAs-InGaP strained quantum well lasers on P-type GaAs substrate for high power operation


    Contributors:
    Sin, Y.K. (author) / Horikawa, H. (author) / Kamijoh, T. (author)


    Publication date :

    1992-01-01


    Size :

    269086 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Channel Guide InGaAs-GaAs-InGaP Strained Quantum Well Lasers on P-Type GaAs Substrate for High Power Operation

    Sin, Y. K. / Horikawa, H. / Kamijoh, T. et al. | British Library Conference Proceedings | 1992



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