1.4m Strained-Layer InGaAs-GaAs-InGaP SQW Lasers on Ternary In0.03Ga0.97As Substrates by Metalorganic Chemical Vapor Deposition
Annual meeting; 9th, IEEE: Lasers and Electro-Optics Society; LEOS '96; 9th annual meeting ; 1996 ; Boston; MA
1996-01-01
2 pages
Described as proceedings. IEEE cat no: 96CH35895
Aufsatz (Konferenz)
Englisch
LEOS , lasers , IEEE , electro-optics
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