The fabrication and performance characteristics of InGaAs/GaAs strained quantum well lasers are described. Lasers with low threshold current, high output power and excellent reliability have been fabricated. In0.2Ga0.8As/GaAs lasers emitting near 1 micrometers are useful as pump sources for erbium doped optical fiber amplifiers.
InGaAs/GaAs strained quantum-well lasers
Sources and Detectors for Fiber Communications ; 1992 ; Boston,MA,United States
Proc. SPIE ; 1788
1993-02-16
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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