The fabrication and performance characteristics of InGaAs/GaAs strained quantum well lasers are described. Lasers with low threshold current, high output power and excellent reliability have been fabricated. In0.2Ga0.8As/GaAs lasers emitting near 1 micrometers are useful as pump sources for erbium doped optical fiber amplifiers.


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    Titel :

    InGaAs/GaAs strained quantum-well lasers


    Beteiligte:

    Kongress:

    Sources and Detectors for Fiber Communications ; 1992 ; Boston,MA,United States


    Erschienen in:

    Erscheinungsdatum :

    1993-02-16





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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