The invention discloses a power semiconductor device and a preparation method thereof, a power module and a vehicle, the power semiconductor device comprises a base layer, the base layer comprises a substrate and an epitaxial layer, the epitaxial layer comprises a cellular region and a terminal region, the cellular region and the terminal region are arranged at an interval, a first groove is formed in the front surface of the cellular region, and a second groove is formed in the front surface of the terminal region; the first groove is in a step shape, a groove gate oxide layer is arranged on the side, facing the front face, of the first groove, the groove gate oxide layer is in a step shape, a first protection layer is arranged on the side, away from the first groove, of the groove gate oxide layer, and a second protection layer is arranged on the side, away from the groove gate oxide layer, of the first groove on the substrate layer. Therefore, the first protection layer is arranged on one side, far away from the first groove, of the groove gate oxide layer, and the second protection layer is arranged on one side, far away from the groove gate oxide layer, of the first groove, of the substrate layer, so that dual protection on the groove gate oxide layer can be realized, and the voltage withstanding characteristic of the power semiconductor in a cellular region can be improved.
本发明公开了一种功率半导体器件及其制备方法、功率模块和车辆,功率半导体器件包括:基底层,基底层包括衬底和外延层,外延层包括元胞区域和终端区域,元胞区域和终端区域间隔设置,元胞区域的正面设置有第一沟槽,第一沟槽呈阶梯状,第一沟槽朝向正面的一侧设置有沟槽栅氧化层,沟槽栅氧化层呈阶梯状,沟槽栅氧化层远离第一沟槽的一侧设置有第一保护层,基底层在第一沟槽背离沟槽栅氧化层的一侧设置有第二保护层。由此,通过在沟槽栅氧化层远离第一沟槽的一侧设置第一保护层,并且在基底层在第一沟槽背离沟槽栅氧化层的一侧设置第二保护层,这样可以实现对沟槽栅氧化层的双重保护,可以提升功率半导体在元胞区域处的耐压特性。
Power semiconductor device and preparation method thereof, power module and vehicle
功率半导体器件及其制备方法、功率模块和车辆
02.07.2024
Patent
Elektronische Ressource
Chinesisch
Semiconductor power device, preparation method, power module, conversion circuit and vehicle
Europäisches Patentamt | 2025
|Europäisches Patentamt | 2025
|Europäisches Patentamt | 2018
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